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30.0 amps. schottky barrier rectifiers ?????3?3??? mbr3040ctg thru mbr30200ctg page 1/3 @ 2010 copyright by american first semiconductor marking diagram a = assembly location y = year ww = work week = specific device code mbr30xx yaww mbr30xx mbr 3040 ctg mbr 3045 ctg mbr 3050 ctg mbr 3060 ctg mbr ctg mbr 30100 ctg mbr 30150 ctg mbr 30200 ctg 200 200 140 40 40 28 80 80 56 1 3 2 - - 1 3 2 3080
ratings and characteristic curves mbr3040ctg thru mbr30200ctg page 2/3 www.first-semi.com mbr3040ct & mbr3045ct mbr3050ct & mbr3060ct mbr3080ct & mbr30100ct mbr3040ct & mbr3045ct mbr3050ct & mbr3060ct mbr3080ct-mbr30200ct mbr30150ct & mbr30200ct mbr3040ct - mbr3045ct mbr3050ct-mbr30200ct
creat by art mbr3040ctg thru mbr30200ctg page 3/3 www.first-semi.com to ? 220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 6: pin 1. anode 2. cathode 3. anode 4. cathode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j

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